The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Sep. 18, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Javier Soto Gonzalez, Chandler, AZ (US);
Houssam Jomaa, Phoenix, AZ (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 21/683 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 23/5389 (2013.01); H01L 24/06 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 23/147 (2013.01); H01L 23/31 (2013.01); H01L 23/3107 (2013.01); H01L 23/49827 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/20 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81903 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/92242 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/1035 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/14 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A substrate with an embedded stacked through-silicon via die is described. For example, an apparatus includes a first die and a second die. The second die has one or more through-silicon vias disposed therein (TSV die). The first die is electrically coupled to the TSV die through the one or more through-silicon vias. The apparatus also includes a coreless substrate. Both the first die and the TSV die are embedded in the coreless substrate.