The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Dec. 18, 2019
Applicants:

Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;

Mattson Technology, Inc., Fremont, CA (US);

Inventors:

Qi Zhang, San Jose, CA (US);

Xinliang Lu, Fremont, CA (US);

Hua Chung, Saratoga, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/32 (2006.01); C23C 16/56 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23C 16/325 (2013.01); C23C 16/56 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32458 (2013.01); H01L 21/0206 (2013.01); H01L 21/02126 (2013.01); H01L 21/02236 (2013.01); H01L 21/02252 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3341 (2013.01); H01L 29/66795 (2013.01);
Abstract

Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.


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