The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Apr. 01, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tai-Yen Peng, Hsinchu, TW;
Sin-Yi Yang, Taichung, TW;
Chen-Jung Wang, Hsinchu, TW;
Yu-Shu Chen, Hsinchu, TW;
Chien Chung Huang, Taichung, TW;
Han-Ting Lin, Hsinchu, TW;
Jyu-Horng Shieh, Hsinchu, TW;
Chih-Yuan Ting, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming integrated circuits includes forming Magnetic Tunnel Junction (MTJ) stack layers, depositing a conductive etch stop layer over the MTJ stack layers, depositing a conductive hard mask over the conductive etch stop layer, and patterning the conductive hard mask to form etching masks. The patterning is stopped by the conductive etch stop layer. The method further includes etching the conducive etch stop layer using the etching masks to define patterns, and etching the MTJ stack layers to form MTJ stacks.