The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

May. 24, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Brandon C. Marin, Chandler, AZ (US);

Jeremy D. Ecton, Gilbert, AZ (US);

Aleksandar Aleksov, Chandler, AZ (US);

Kristof Darmawikarta, Chandler, AZ (US);

Yonggang Li, Chandler, AZ (US);

Dilan Seneviratne, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/208 (2006.01); H01P 1/20 (2006.01); H01P 7/10 (2006.01); H01L 23/66 (2006.01); H01P 3/16 (2006.01); H01L 21/768 (2006.01); H01P 11/00 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01P 1/2088 (2013.01); H01L 21/288 (2013.01); H01L 21/76802 (2013.01); H01L 21/76874 (2013.01); H01L 21/76879 (2013.01); H01L 23/66 (2013.01); H01P 1/2002 (2013.01); H01P 3/16 (2013.01); H01P 7/10 (2013.01); H01P 11/006 (2013.01); H01P 11/008 (2013.01); H01L 2223/6627 (2013.01);
Abstract

A filter structure comprises a first dielectric buildup film. A second dielectric buildup film is over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst. A trench is in the second dielectric buildup film. A metal is selectively plated to sidewalls of the trench based at least in part on the metallization catalyst. A low-loss buildup film is over the metal that substantially fills the trench.


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