The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Aug. 23, 2019
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Ming-Hung Chen, Kaohsiung, TW;

Sheng-Yu Chen, Kaohsiung, TW;

Chang-Lin Yeh, Kaohsiung, TW;

Yung-I Yeh, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 23/00 (2006.01); H01L 33/56 (2010.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 27/12 (2006.01); H01L 33/62 (2010.01); H01L 23/522 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1266 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 21/2855 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/13069 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19102 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.


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