The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jun. 25, 2019
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Nai-Wei Liu, Hsin-Chu, TW;

Yen-Yao Chi, Hsin-Chu, TW;

Yeh-Chun Kao, Hsin-Chu, TW;

Shih-Huang Yeh, Hsin-Chu, TW;

Tzu-Hung Lin, Hsin-Chu, TW;

Wen-Sung Hsu, Hsin-Chu, TW;

Assignee:

MediaTek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 9/16 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01Q 1/2283 (2013.01); H01Q 9/0407 (2013.01); H01Q 9/16 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.


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