The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Mar. 10, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Yong She, Songjiang, CN;
Bin Liu, Shanghai, CN;
Zhicheng Ding, Shanghai, CN;
Aiping Tan, Shanghai, CN;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 27/1157 (2017.01); G11C 5/04 (2006.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); G11C 5/04 (2013.01); H01L 24/29 (2013.01); H01L 25/0657 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.