The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jul. 17, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Sook Woon Chan, Melaka, MY;

Chau Fatt Chiang, Melaka, MY;

Kok Yau Chua, Melaka, MY;

Soon Lock Goh, Malacca, MY;

Swee Kah Lee, Melaka, MY;

Joachim Mahler, Regensburg, DE;

Mei Chin Ng, Melaka, MY;

Beng Keh See, Melaka, MY;

Guan Choon Matthew Nelson Tee, Malacca, MY;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/31 (2006.01); C09D 5/24 (2006.01); C23C 18/16 (2006.01); C23C 18/18 (2006.01); H01L 23/29 (2006.01); C09D 5/00 (2006.01); C09D 201/00 (2006.01); C23C 18/34 (2006.01); H01L 21/56 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); C09D 5/002 (2013.01); C09D 5/24 (2013.01); C09D 201/00 (2013.01); C23C 18/166 (2013.01); C23C 18/1608 (2013.01); C23C 18/1612 (2013.01); C23C 18/1637 (2013.01); C23C 18/1689 (2013.01); C23C 18/182 (2013.01); C23C 18/1831 (2013.01); C23C 18/1837 (2013.01); C23C 18/1868 (2013.01); C23C 18/1879 (2013.01); C23C 18/1882 (2013.01); C23C 18/34 (2013.01); H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 23/293 (2013.01); H01L 23/295 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/16 (2013.01); C23C 18/1834 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/97 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.


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