The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Feb. 27, 2018
Kwansei Gakuin Educational Foundation, Nishinomiya, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya, JP;
Abstract
In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate () to mechanical polishing is removed by heating the substrate () under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate () performed the ion activation step are removed by heating the substrate () under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate () is performed.