The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Aug. 07, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tung-He Chou, Hsinchu, TW;

Sheng-Chau Chen, Tainan, TW;

Ming-Tung Wu, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 5/02 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); B08B 3/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); B08B 3/10 (2013.01); B08B 5/02 (2013.01); H01L 21/67051 (2013.01); H01L 21/68764 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a wafer trimming and cleaning apparatus, which includes a blade that is configured to trim a damaged edge portion of a wafer, thereby defining a new sidewall of the wafer. The wafer trimming and cleaning apparatus further includes water nozzles and an air jet nozzle. The water nozzles are configured to apply deionized water to the new sidewall of the wafer to remove contaminant particles generated by the blade. The air jet nozzle is configured to apply pressurized gas to a first top surface area of the wafer to remove the contaminant particles generated by the blade. The first top surface area overlies the new sidewall of the wafer.


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