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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11080453 B1

PDFFull Text
Date of Patent:
Aug. 03, 2021

Filed:

Oct. 11, 2019

Integrated circuit fin layout method, system, and structure

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Po-Hsiang Huang, Tainan, TW;

Sheng-Hsiung Chen, Zhubei, TW;

Chih-Hsin Ko, Fongshan, TW;

Fong-Yuan Chang, Hsinchu, TW;

Clement Hsingjen Wann, Carmel, NY (US);

Li-Chun Tien, Tainan, TW;

Chia-Ming Hsu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Ly D Pham

Int. Cl.
CPC ...
G11C 11/4076 (2006.01); G11C 11/4094 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 7/18 (2006.01); G11C 7/22 (2006.01); G06F 30/392 (2020.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); G06F 30/367 (2020.01); G06F 30/398 (2020.01); G06F 30/3312 (2020.01); G06F 111/20 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/3312 (2020.01); G06F 30/367 (2020.01); G06F 30/398 (2020.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); G06F 2111/20 (2020.01);
Abstract

A method of operating an IC manufacturing system includes determining whether an n-type active region of a cell or a p-type active region of the cell is a first active region based on a timing critical path of the cell, positioning the first active region along a cell height direction in an IC layout diagram of a cell, the first active region having a first total number of fins extending in a direction perpendicular to the cell height direction. The method also includes positioning a second active region in the cell along the cell height direction, the second active region being the n-type or p-type opposite the n-type or p-type of the first active region and having a second total number of fins less than the first total number of fins and extending in the direction, and storing the IC layout diagram of the cell in a cell library.

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