The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Aug. 31, 2017
Applicant:

L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;

Inventors:

Peng Shen, Ibaraki, JP;

Keiichiro Urabe, Ibaraki, JP;

Jiro Yokota, Ibaraki, JP;

Nicolas Gosset, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/306 (2006.01); C07C 19/08 (2006.01); C23C 16/24 (2006.01); C23C 16/26 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); C07C 19/08 (2013.01); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/56 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 21/02019 (2013.01); H01L 21/02115 (2013.01); H01L 21/02123 (2013.01);
Abstract

Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (CHF), 1,1,2,2,3,3-hexafluoropropane (iso-CHF), 1,1,1,2,3,3,3-heptafluoropropane (CHF), and 1,1,1,2,2,3,3-heptafluoropropane (iso-CHF), wherein the first etching layer comprises a material different from that of the second etching layer.


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