The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Oct. 11, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shyh-Shin Ferng, Hsinchu, TW;

Chung-Li Huang, Hsinchu, TW;

Yi-Hung Lin, Taipei, TW;

Chungwei Wang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); A61B 6/00 (2006.01); H01L 23/544 (2006.01); H01L 21/66 (2006.01); G01N 23/201 (2018.01); A61B 6/08 (2006.01); G01T 1/24 (2006.01); H01L 27/10 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
A61B 6/584 (2013.01); A61B 6/08 (2013.01); A61B 6/483 (2013.01); G01N 23/201 (2013.01); G01T 1/243 (2013.01); H01L 22/30 (2013.01); H01L 23/544 (2013.01); H01L 27/10 (2013.01); A61B 6/44 (2013.01); G06T 2207/10116 (2013.01); H01L 21/00 (2013.01); H01L 22/12 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method includes forming a test key. The formation of the test key includes forming a first plurality of semiconductor strips, and cutting the first plurality of semiconductor strips into an array of a second plurality semiconductor strips, with each row of the array being formed from one strip in the first plurality of semiconductor strips, forming isolation regions in recesses between the second plurality of semiconductor strips, and recessing the isolation regions. The top portions of the second plurality of semiconductor strips protrude higher than the isolation regions form semiconductor fins, which form a fin array. An X-ray beam is projected on the test key. A diffraction pattern is obtained from scattered X-ray beam scattered from the test key.


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