The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Feb. 28, 2019
Taiwan Semiconductor Manufacturing Co., Hsinchu, TW;
H. L. Chen, Hsinchu, TW;
Huai-jen Tung, Tainan, TW;
Keng-Ying Liao, Tainan, TW;
Po-Zen Chen, Tainan, TW;
Su-Yu Yeh, Tainan, TW;
Chih Wei Sung, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method for forming a semiconductor device photo-sensing regions are formed over a frontside of a substrate. A first layer is formed over a backside of the substrate and is patterned to form a plurality of grid lines. The grid lines can define a plurality of first areas and a plurality of second areas. A second layer maybe formed over exposed portions of the backside, the gridlines, the first areas, and the second areas and a third layer may be formed over the second layer. The second and third layer may have different etch rates and the third layer is pattern so as to remove the third layer from over the plurality of first areas.