The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
May. 05, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Leonid Dorf, San Jose, CA (US);
Travis Koh, Sunnyvale, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Olivier Joubert, Meylan, FR;
Philip A. Kraus, San Jose, CA (US);
Rajinder Dhindsa, Pleasanton, CA (US);
James Rogers, Los Gatos, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.