The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Nov. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Fang-Liang Lu, New Taipei, TW;
I-Hsieh Wong, Kaohsiung, TW;
Shih-Ya Lin, Chaozhou Township, TW;
Cheewee Liu, Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a first layer of a first semiconductor material disposed on a semiconductor substrate and a second layer of a second semiconductor material disposed on the first layer. The second semiconductor material is formed of an alloy that includes a first element and a second element. The first semiconductor material and the second semiconductor material are different. A gate structure is disposed on a first portion of the second layer. A surface region of a second portion of the second layer not covered by the gate structure has a higher concentration of the second element than an internal region of the second portion of the second layer, and the surface region surrounds the internal region.