The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Feb. 07, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
John J. Pekarik, Underhill, VT (US);
Anthony K. Stamper, Williston, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Herbert Ho, New Windsor, NY (US);
Qizhi Liu, Lexington, MA (US);
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first heterojunction bipolar transistor includes a first emitter, a first collector, and a first base layer having a portion positioned between the first emitter and the first collector. A second heterojunction bipolar transistor includes a second emitter, a second collector, and a second base layer having a portion positioned between the second emitter and the second collector. The first and second base layers each comprise silicon-germanium, the first base layer includes a first germanium profile, and the second base layer includes a second germanium profile that is identical to the first germanium profile.