The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Dec. 06, 2019
Intel Corporation, Santa Clara, CA (US);
Daniel Ouellette, Portland, OR (US);
Christopher Wiegand, Portland, OR (US);
Justin Brockman, Portland, OR (US);
Tofizur Rahman, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Angeline Smith, Hillsboro, OR (US);
Andrew Smith, Hillsboro, OR (US);
James Pellegren, Portland, OR (US);
Aaron Littlejohn, Portland, OR (US);
Juan G. Alzate-Vinasco, Tigard, OR (US);
Yu-Jin Chen, Hillsboro, OR (US);
Tanmoy Pramanik, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.