The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Mar. 27, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yu Qi Wang, Wuhan, CN;
Wenjie Zhang, Wuhan, CN;
Hong Guang Song, Wuhan, CN;
Lipeng Liu, Wuhan, CN;
Lianjuan Ren, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In the disclosed method, a mask is formed on a microstructure. The mask includes a first pattern positioned over a first region of the microstructure and a second pattern positioned over a second region of the microstructure. A first etching process is performed to etch the microstructure according to the first and second patterns formed in the mask. The first etching process transfers the first and second patterns of the mask into the first and second regions of the microstructure, respectively. A protective layer is subsequently formed over the first pattern of the mask that is positioned over the first region of the microstructure. When the protective layer is formed, a second etching process is performed to etch the microstructure and transfer the second pattern of the mask further into the second region of the microstructure. The method also includes removing the mask and the protective layer from the microstructure.