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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11062910 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Jun. 18, 2019

Surface treatment of silicon or silicon germanium surfaces using organic radicals

Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;

Inventors:

Michael X. Yang, Palo Alto, CA (US);

Hua Chung, Saratoga, CA (US);

Xinliang Lu, Fremont, CA (US);

Assignees:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, CN;

Attorney:

Dority & Manning, P.A.

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/30 (2006.01); C23C 16/452 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); B01D 67/00 (2006.01); C23F 1/12 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); B01D 67/009 (2013.01); C23C 16/452 (2013.01); C23F 1/12 (2013.01); H01J 37/32743 (2013.01); H01J 37/32899 (2013.01); H01L 21/0234 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/02252 (2013.01); H01L 21/02321 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/3105 (2013.01); H01L 21/31058 (2013.01); H01L 21/31138 (2013.01); H01L 21/321 (2013.01); H01L 21/32136 (2013.01); H01L 21/76826 (2013.01); C23F 4/00 (2013.01); H01J 37/321 (2013.01); H01J 2237/006 (2013.01); H01J 2237/332 (2013.01);
Abstract

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

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