The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

May. 09, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Justin B. Dorhout, Boise, ID (US);

Damir Fazil, Boise, ID (US);

Nancy M. Lomeli, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); G11C 5/06 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/063 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method used in forming a memory array comprises forming a conductive tier atop a substrate, with the conductive tier comprising openings therein. An insulator tier is formed atop the conductive tier and the insulator tier comprises insulator material that extends downwardly into the openings in the conductive tier. A stack comprising vertically-alternating insulative tiers and wordline tiers is formed above the insulator tier. Strings comprising channel material that extend through the insulative tiers and the wordline tiers are formed. The channel material of the strings is directly electrically coupled to conductive material in the conductive tier. Structure independent of method is disclosed.


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