The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Apr. 10, 2019
International Business Machines Corporation, Armonk, NY (US);
Yao Yao, Albany, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Zhenxing Bi, Niskayuna, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is presented for forming single diffusion break (SDB) without damaging source and drain epitaxial growth regions. The method includes forming the source and drain epitaxial regions between sacrificial gates, the sacrificial gates formed over a plurality of fins, depositing an interlayer dielectric (ILD) over the source and drain epitaxial regions, performing SDB patterning, and removing at least one of the sacrificial gates to expose the plurality of fins. The method further includes recessing the plurality of fins to create a first opening, forming inner spacers within the opening, removing the plurality of fins to create a second opening, dimensions of the second opening defined by the inner spacers, and laterally etching the second opening to increase SDB width.