The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Aug. 24, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Brennen K. Mueller, Portland, OR (US);

Daniel Pantuso, Portland, OR (US);

Mauro J. Kobrinsky, Portland, OR (US);

Chytra Pawashe, Beaverton, OR (US);

Myra McDonnell, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01); H01L 21/67 (2006.01); H01L 21/50 (2006.01); H01L 21/673 (2006.01); H01L 21/603 (2006.01); B29C 65/02 (2006.01); B29C 65/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67017 (2013.01); H01L 21/50 (2013.01); H01L 21/67092 (2013.01); H01L 21/67098 (2013.01); H01L 21/67248 (2013.01); H01L 21/67276 (2013.01); H01L 21/67389 (2013.01); B29C 65/02 (2013.01); B29C 65/7802 (2013.01); B29C 65/782 (2013.01); B29C 66/0014 (2013.01); B29C 66/0016 (2013.01); B29C 66/342 (2013.01); B29C 66/345 (2013.01); B29C 66/41 (2013.01); B29C 66/96 (2013.01); H01L 2021/603 (2013.01);
Abstract

Techniques and mechanisms for bonding a first wafer to a second wafer in the presence of a fluid, the viscosity of which is greater than a viscosity of air at standard ambient temperature and pressure. In an embodiment, a first surface of the first wafer is brought into close proximity to a second surface of the second wafer. The fluid is provided between the first surface and the second surface when a first region of the first surface is made to contact a second region of the second surface to form a bond. The viscosity of the fluid mitigates a rate of propagation of the bond along a wafer surface, which in turn mitigates wafer deformation and/or stress between wafers. In another embodiment, the viscosity of the fluid is changed dynamically while the bond propagates between the first surface and the second surface.


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