The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
May. 28, 2018
Asml Netherlands B.v., Veldhoven, NL;
Frank Staals, Eindhoven, NL;
Anton Bernhard Van Oosten, Lommel, BE;
Yasri Yudhistira, Cupertino, CA (US);
Carlo Cornelis Maria Luijten, Duizel, NL;
Bert Verstraeten, Lommel, BE;
Jan-Willem Gemmink, Riethoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features () interleaved with second features () A minimum dimension (w) of each first feature is close to a printing resolution. A maximum dimension (w) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features () arranged in pairs.