The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Jul. 01, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ravi K. Bonam, Albany, NY (US);

Mukta Ghate Farooq, Hopewell Junction, NY (US);

Dinesh Gupta, Hopewell Junction, NY (US);

James Kelly, Schenectady, NY (US);

Kamal K. Sikka, Poughkeepsie, NY (US);

Joshua M. Rubin, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 23/13 (2006.01); H01L 21/822 (2006.01); H01L 27/146 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 25/00 (2013.01); H01L 21/481 (2013.01); H01L 21/8221 (2013.01); H01L 23/13 (2013.01); H01L 27/14687 (2013.01); H01L 23/367 (2013.01);
Abstract

A semiconductor wafer includes a first substrate and a first etch stop layer formed on the first substrate. The etch stop layer has an opening. The semiconductor wafer further includes a second substrate and a second etch stop layer formed on the second substrate. The first substrate is bonded on top of the second substrate such that the first etch stop layer is positioned between the first substrate and the second substrate. A trench is formed in the opening.


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