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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11049811 B1

PDFFull Text
Date of Patent:
Jun. 29, 2021

Filed:

Dec. 26, 2018

Forming interlayer dielectric material by spin-on metal oxide deposition

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chi-Lin Teng, Taichung, TW;

Jung-Hsun Tsai, Hsin-Chu, TW;

Kai-Fang Cheng, Taoyuan, TW;

Hsin-Yen Huang, Yonghe, TW;

Hai-Ching Chen, Hsinchu, TW;

Tien-I Bao, Dayuan Township, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Daniel Luke

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/283 (2013.01); H01L 21/31 (2013.01); H01L 21/31105 (2013.01); H01L 21/32051 (2013.01); H01L 21/32131 (2013.01); H01L 21/32133 (2013.01); H01L 21/76802 (2013.01); H01L 21/76837 (2013.01); H01L 21/76879 (2013.01); H01L 21/76897 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 29/41783 (2013.01); H01L 29/45 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66477 (2013.01); H01L 29/66545 (2013.01); H01L 29/456 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01);
Abstract

A plurality of high-k metal gate (HKMG) structures is formed over a substrate. The (HKMG) structures are separated by a plurality of gaps. The HKMG structures each include a first dielectric layer at an upper surface of the HKMG structure. The gaps are filled with a first conductive material. A portion of the first conductive material is removed in each of the gaps through an etching-back process. A metal oxide layer is formed using a spin-on deposition process. The metal oxide layer is formed over the (HKMG) structures and over the first conductive material. A second dielectric layer is formed over the metal oxide layer. An opening is etched in the second dielectric layer. The opening is etched through the second dielectric layer and through the metal oxide layer. The opening is filled with a second conductive material.

Find Patent Forward Citations

Teng, Chi-Lin. (2021). Forming interlayer dielectric material by spin-on metal oxide deposition (U.S. Patent No. 11049811). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11049811

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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