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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11043565 B1

PDFFull Text
Date of Patent:
Jun. 22, 2021

Filed:

Nov. 20, 2019

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhengliang Xia, Wuhan, CN;

Pan Huang, Wuhan, CN;

Wei Xu, Wuhan, CN;

Ping Yan, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Wenbin Zhou, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

Bayes PLLC

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/76841 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved a plurality of conductor layers and a plurality of insulating layers. The 3D memory device also includes a plurality of channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes a support structure dividing the source structure into first and second sections. The source structure also includes an adhesion layer. At least a portion of the adhesion layer extends through the support structure and conductively connects the first and second sections.

Find Patent Forward Citations

Xia, Zhengliang. (2021). Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same (U.S. Patent No. 11043565). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11043565

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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