The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Nov. 20, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Sheng-Huang Huang, Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Jiunyu Tsai, Hsinchu, TW;
Hung Cho Wang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure having a memory region. The semiconductor structure includes an Nmetal layer in a memory region and a periphery region, the periphery region spanning a wider area than the memory region, a plurality of magnetic tunneling junctions (MTJs) over the Nmetal layer, the plurality of MTJs having at least one of mixed pitches and mixed sizes, a top electrode via over each of the plurality of MTJs; and an (N+M)metal layer over the plurality of MTJs. A method for manufacturing the semiconductor structure is also disclosed.