The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Jan. 28, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Ce Qin, Fremont, CA (US);

Zhongkui Tan, Fremont, CA (US);

Yisha Mao, Santa Clara, CA (US);

Yansha Jin, Fremont, CA (US);

Austin Casey Faucett, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0271 (2013.01); H01L 21/0332 (2013.01);
Abstract

A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.


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