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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11031508 B1

PDFFull Text
Date of Patent:
Jun. 08, 2021

Filed:

Apr. 20, 2020

Semiconductor device with treated interfacial layer on silicon germanium

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Yu Chang, New Taipei, TW;

Hsiang-Pi Chang, New Taipei, TW;

Zi-Wei Fang, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/324 (2006.01); H01L 21/28 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28202 (2013.01); H01L 21/28238 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01);
Abstract

A semiconductor device includes a source region, a drain region, a SiGe channel region, an interfacial layer, a high-k dielectric layer and a gate electrode. The source region and the drain region are over a substrate. The SiGe channel region is laterally between the source region and the drain region. The interfacial layer forms a nitrogen-containing interface with the SiGe channel region. The high-k dielectric layer is over the interfacial layer. The gate electrode is over the high-k dielectric layer.

Find Patent Forward Citations

Chang, Chih-Yu. (2021). Semiconductor device with treated interfacial layer on silicon germanium (U.S. Patent No. 11031508). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11031508

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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