The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Mar. 30, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Chandra S. Mohapatra, Hillsboro, OR (US);
Glenn A. Glass, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Karthik Jambunathan, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/205 (2006.01); H01L 29/267 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02433 (2013.01); H01L 21/02546 (2013.01); H01L 21/30617 (2013.01); H01L 21/764 (2013.01); H01L 29/045 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/7853 (2013.01);
Abstract
A replacement fin layer is deposited on a sub-fin layer in trenches isolated by an insulating layer on a substrate. The replacement fin layer has first component rich side portions and a second component rich core portion. The second component rich core portion is etched to generate a double fin structure comprising the first component rich fins.