The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Apr. 18, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hung-Ming Chen, Hsinchu County, TW;
Yu-Chang Lin, Hsinchu, TW;
Chung-Ting Li, Hsinchu County, TW;
Jen-Hsiang Lu, Taipei, TW;
Hou-Ju Li, Hsinchu, TW;
Chih-Pin Tsao, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing source/drain feature is present in the substrate, and the carbon-containing diffusion barrier is between the channel region and the phosphorus-containing source/drain feature. The gate is present over the channel region of the substrate. The gate spacer abuts the gate structure and is present over a portion of the phosphorus-containing source/drain feature.