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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11022884 B1

PDFFull Text
Date of Patent:
Jun. 01, 2021

Filed:

Jul. 09, 2015

Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Wataru Shibayama, Toyama, JP;

Kenji Takase, Funabashi, JP;

Makoto Nakajima, Toyama, JP;

Satoshi Takeda, Toyama, JP;

Hiroyuki Wakayama, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/11 (2006.01); C08G 77/24 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); C08G 77/28 (2006.01); C09D 183/08 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 77/24 (2013.01); C08G 77/28 (2013.01); C09D 183/08 (2013.01); G03F 7/0752 (2013.01); G03F 7/091 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/327 (2013.01); G03F 7/38 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01);
Abstract

A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1):RRSi(R)  Formula (1)[where Ris an organic group of Formula (2):—R—R—R  Formula (2)(where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate, followed by baking. The underlayer film-forming composition may include acid as a hydrolysis catalyst, or water.

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