The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Jul. 04, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Jen Hsiao, Hsinchu, TW;
Ya-Ping Chen, Hsinchu, TW;
Chien-Hung Lin, Hsinchu, TW;
Wen-Pin Liu, Hsinchu County, TW;
Chin-Wen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.