The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Nov. 26, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Pei-Haw Tsao, Tai-Chung, TW;

An-Tai Xu, Cupertino, CA (US);

Huang-Ting Hsiao, Taoyuan County, TW;

Kuo-Chin Chang, Chiayi, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 23/145 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/5329 (2013.01); H01L 23/562 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11903 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16059 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/81191 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a semiconductor chip; a substrate facing an active surface of the semiconductor chip; and a conductive bump extending from the active surface of the semiconductor chip toward the substrate, wherein the conductive bump comprises: a plurality of bump segments comprising a first group of bump segments and a second group of bump segments, wherein each bump segment comprises the same segment height in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment comprises a volume defined by the multiplication of the segment height with the average cross-sectional area of the bump segment; wherein the ratio of the total volume of the first group of bump segments to the total volume of the second group of bump segments is between about 0.03 and about 0.8.


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