The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jun. 15, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Mingwei Zhu, San Jose, CA (US);
Rongjun Wang, Dublin, CA (US);
Nag B. Patibandla, Pleasanton, CA (US);
Xianmin Tang, San Jose, CA (US);
Vivek Agrawal, Fremont, CA (US);
Cheng-Hsiung Tsai, Cupertino, CA (US);
Muhammad Rasheed, San Jose, CA (US);
Dinesh Saigal, San Jose, CA (US);
Praburam Gopal Raja, Santa Clara, CA (US);
Omkaram Nalamasu, San Jose, CA (US);
Anantha Subramani, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.