The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Sep. 12, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chi-Yang Yu, Taoyuan County, TW;

Chien-Kuo Chang, Hsinchu County, TW;

Chih-Hao Lin, Hsinchu, TW;

Jung Tsung Cheng, Hsinchu, TW;

Kuan-Lin Ho, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/10 (2006.01); H01L 25/00 (2006.01); H01L 23/552 (2006.01); H01L 23/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/56 (2013.01); H01L 23/10 (2013.01); H01L 23/3185 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/02 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/04 (2013.01); H01L 23/552 (2013.01); H01L 23/562 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/92222 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/92242 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16724 (2013.01); H01L 2924/16747 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.


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