The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Dec. 02, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Chi Tu, Hsinchu, TW;
Chu-Jie Huang, Tainan, TW;
Sheng-Hung Shih, Hsinchu, TW;
Nai-Chao Su, Tainan, TW;
Wen-Ting Chu, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a metal structure, a first dielectric layer, a bottom electrode, a second dielectric layer, a resistance switching layer, and a top electrode. The first dielectric layer surrounds the metal structure. The bottom electrode is in contact with a top surface of the metal structure. The second dielectric layer surrounds the bottom electrode, in which a top surface of the bottom electrode is higher than a top surface of the second dielectric layer. The resistance switching layer is over the bottom electrode. The top electrode is over the resistance switching layer.