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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11004842 B1

PDFFull Text
Date of Patent:
May. 11, 2021

Filed:

Oct. 21, 2019

System and method of fabricating esd finfet with improved metal landing in the drain

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tzung-Chi Lee, Taipei County, TW;

Tung-Heng Hsieh, Hsinchu County, TW;

Bao-Ru Young, Hsinchu County, TW;

Yung Feng Chang, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Errol V Fernandes

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/3115 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); G06F 30/392 (2020.01); H01L 21/266 (2013.01); H01L 21/31155 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/66659 (2013.01); H01L 29/66795 (2013.01); H01L 29/7835 (2013.01); H01L 29/7851 (2013.01);
Abstract

A mandrel is formed over an active region that includes a first region and a second region. The first region and the second region are reserved for the formation of a source and a drain of a FinFET, respectively. A portion of the mandrel formed over the second region is broken up into a first segment and a second segment separated from the first segment by a gap. Spacers are formed on opposite sides of the mandrel. Using the spacers, fins are defined. The fins protrude upwardly out of the active region. A portion of the second region corresponding to the gap has no fins formed thereover. The source is epitaxially grown on the fins in the first region. At least a portion of the drain is epitaxially grown on the portion of the second region having no fins.

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