The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Aug. 16, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Yao-Ting Tsai, Taichung, TW;

Chiang-Hung Chen, Taichung, TW;

Che-Fu Chuang, Taichung, TW;

Wen Hung, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/74 (2013.01);
Abstract

Provided is a method of fabricating a semiconductor device, including the following steps. A first seal ring and a second seal ring that are separated from each other are formed on a substrate. A protective layer covering the first seal ring and the second seal ring is formed on the substrate. The protective layer between the first seal ring and the second seal ring includes a concave surface. The protective layer at the concave surface and a portion of the protective layer on the first seal ring are removed to form a spacer on a sidewall of the first seal ring, and form an opening in the protective layer. The width of the opening is greater than the width of the first seal ring, and the opening exposes a top surface of the first seal ring and the spacer.


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