The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
May. 29, 2019
Ltcam Co., Ltd., Pyeongtaek-si, KR;
Sok Ho Lee, Yongin-si, KR;
Jung Hwan Song, Seoul, KR;
Seong Sik Jeon, Suwon-si, KR;
Sung Il Jo, Daejeon, KR;
Byeoung Tak Kim, Incheon, KR;
Ah Hyeon Lim, Daejeon, KR;
Junwoo Lee, Jeollabuk-do, KR;
LTCAM CO., LTD., Pyeongtaek-si, KR;
Abstract
A silicon nitride etching composition effective to selectively etch a silicon nitride film contains an inorganic acid; a silicon-based compound; from 0.01 to 1 wt%, based on total weight of the etching composition, of an ammonium-based compound composed of ammonium acetic acid; and water. The silicon-based compound may be represented by Chemical Formula 1 below or Chemical Formula 2 below,(R1)-Si-R2-Si-(R1)  Chemical Formula 1,(R3)-Si-R4-Si-(R3)  Chemicl Formula 2. A method of etching a silicon nitride film includes providing the etching composition; and wet etching the silicon nitride film in the etching composition at an etching rate that is at least 200 times faster than a corresponding silicon oxide film.