The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
May. 21, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Kuei-Hung Shen, Hsinchu, TW;
Hsun-Chung Kuang, Hsinchu, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Ru-Liang Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a bottom electrode via (BEVA) in a dielectric layer, a recap layer on the BEVA, a bottom electrode on the recap layer, and a magnetic tunneling junction (MTJ) layer over the recap layer and vertically aligning with the BEVA. The BEVA includes a lining layer over a bottom and a sidewall of a trench of the BEVA and a copper layer over the lining layer, filling the trench of the BEVA. The copper layer has a dimpled structure with a top surface lower than a top surface of the dielectric layer. The recap layer overlaps a top surface of the lining layer, an entire top surface of the copper layer, and a portion of the dielectric stack adjacent to the lining layer.