The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Aug. 06, 2019
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Meiyu Piao, Tokyo, JP;

Kentaro Odanaka, Tokyo, JP;

Masatoshi Wakahara, Tokyo, JP;

Wakana Onoe, Tokyo, JP;

Heidi Lan, Tokyo, JP;

Assignee:

DISCO CORPORTION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01); H01L 21/304 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/304 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/6836 (2013.01);
Abstract

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.


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