The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Mar. 30, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yong Wu, Sunnyvale, CA (US);
Wei V. Tang, Santa Clara, CA (US);
Jianqiu Guo, San Jose, CA (US);
Wenyi Liu, Santa Clara, CA (US);
Yixiong Yang, Fremont, CA (US);
Jacqueline S. Wrench, San Jose, CA (US);
Mandyam Sriram, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Yumin He, Santa Clara, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02664 (2013.01); H01L 21/28518 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01);
Abstract
In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.