The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 22, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
I-Ming Chang, ShinChu, TW;
Hsiang-Pi Chang, New Taipei, TW;
Hsueh-Wen Tsau, Miaoli County, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor layer on a semiconductor substrate, forming an interfacial layer on the semiconductor layer, forming a first gate dielectric layer on the interfacial layer, introducing fluorine on the first gate dielectric layer, annealing the first gate dielectric layer, forming a second gate dielectric layer on the first gate dielectric layer, introducing fluorine on the second gate dielectric layer, annealing the second gate dielectric layer, and forming a gate stack structure on the second gate dielectric layer.