The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Sep. 19, 2019
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventors:

Chien-Shao Tang, Hsinchu, TW;

Ting-Jui Lin, Hsinchu, TW;

Hsiang-Ming Chou, Hsinchu, TW;

Fang-Yu Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0296 (2013.01); H01L 27/0207 (2013.01); H01L 29/456 (2013.01); H01L 29/0847 (2013.01);
Abstract

An electrostatic discharge (ESD) protection device for a semiconductor device that includes a gate, a source including a silicide portion having a plurality of source contacts, and a drain including a silicide portion having a plurality of drain contacts, wherein the source and drain are extended away from the gate along a device axis. The ESD device includes a resist protective oxide (RPO) portion located on the semiconductor device in between the plurality of drain contacts and in between the plurality of source contacts, respectively.


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