The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Jun. 19, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Yuan Teng, Hsinchu, TW;

Hao-Yi Tsai, Hsinchu, TW;

Tin-Hao Kuo, Hsinchu, TW;

Ching-Yao Lin, New Taipei, TW;

Teng-Yuan Lo, Hsinchu, TW;

Chih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/11 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3114 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/117 (2013.01); H01L 25/50 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/19106 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor package includes a first redistribution structure, a semiconductor die electrically coupled to the first redistribution structure, a die attach material interposed between the first redistribution structure and the semiconductor die, and an insulating encapsulant disposed on the first redistribution structure and covering the semiconductor die and the die attach material. A bottom of the semiconductor die is embedded in the die attach material, and a thickness of a portion of the die attach material disposed over a spacing of conductive traces of the first redistribution structure is greater than a thickness of another portion of the die attach material disposed over the conductive traces of the first redistribution structure and underlying the bottom of the semiconductor die.


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