The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Oct. 29, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Eric R. Miller, Watervliet, NY (US);
Stuart A. Sieg, Albany, NY (US);
Yann Mignot, Slingerlands, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Christopher J. Waskiewicz, Rexford, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/3085 (2013.01); H01L 21/823431 (2013.01);
Abstract
Methods for forming semiconductor fins include forming a protective layer around a base of a hardmask fin on an underlying semiconductor layer. A portion of the hardmask fin is etched away with an etch that is selective to the protective layer. A semiconductor fin is etched from the semiconductor layer using the etched hardmask fin as a mask.