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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985011 B1

PDFFull Text
Date of Patent:
Apr. 20, 2021

Filed:

Jan. 09, 2018

Structure and formation method of semiconductor device with resistive elements

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsiu-Wen Hsueh, Taichung, TW;

Yu-Hsiang Chen, Hsinchu, TW;

Wen-Sheh Huang, Hsinchu, TW;

Chii-Ping Chen, Hsinchu, TW;

Wan-Te Chen, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Patricia D Reddington

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 27/06 (2006.01); H01L 23/64 (2006.01); H01L 21/304 (2006.01); H01L 27/08 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); H01L 21/304 (2013.01); H01L 21/762 (2013.01); H01L 23/5228 (2013.01); H01L 23/647 (2013.01); H01L 27/0635 (2013.01); H01L 27/0802 (2013.01); H01L 28/24 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first resistive element and a second resistive element over the semiconductor substrate. The semiconductor device structure also includes a first conductive feature electrically connected to the first resistive element and a second conductive feature electrically connected to the second resistive element. The semiconductor device structure further includes a dielectric layer surrounding the first conductive feature and the second conductive feature.

Find Patent Forward Citations

Hsueh, Hsiu-Wen. (2021). Structure and formation method of semiconductor device with resistive elements (U.S. Patent No. 10985011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10985011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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