The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Aug. 19, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kam-Tou Sio, Zhubei, TW;
Chih-Liang Chen, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Charles Chew-Yuen Young, Cupertino, CA (US);
Hui-Ting Yang, Zhubei, TW;
Ko-Bin Kao, Taichung, TW;
Ru-Gun Liu, Zhubei, TW;
Shun Li Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of generating a layout diagram includes: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.